Model: T3DSO3504-PROMO-1 Specifications |
Acquisition System |
Sampling Rate |
5 GSa/s (interleaving mode), 2.5GSa/s (non-interleaving mode) |
Memory Depth |
250 Mpts (single-channel), 125 Mpts (dual-channel) |
Peak Detect |
400 ps |
Average |
Averages: 4, 16, 32, 64, 128, 256, 512, 1024 |
Eres |
Enhance bits: 0.5, 1, 1.5, 2, 2.5, 3 selectable |
Interpolation |
Sinx/x, Linear |
Input |
Channels |
4 + EXT |
Coupling |
DC, AC, GND |
Impedance |
DC: (1 MΩ ± 2%) || (16 pF ± 2 pF)
50 Ω: 50 Ω ± 1% |
Max. Input voltage |
1 MΩ ≤ 400 Vpk (DC + PeakAC), DC - 10 kHz50 Ω ≤ 5 Vrms, ± 10 V Peak |
CH to CH Isolation |
DC - 100 MHz > 40 dB, 100 MHz - BW ≥ 34 dB |
Probe Attenuation |
1X, 10X, 100X, Custom |
Horizontal System |
Time Scale |
500ps/div - 1000s/div |
Channel Skew |
<150ps |
Waveform Capture Rate |
Up to 110,000 wfm/s (normal mode), 500,000 wfm/s (sequence mode) |
Intensity grading |
256-level |
Display Format |
Y-T, X-Y, Roll (≥ 50 ms/div) |
Time base Accuracy |
± 1 ppm initial; ± 1 ppm 1st year ageing; ± 3.5 ppm 10-year ageing |
Roll Mode |
50ms/div - 1000s/div (1-2-5 Step) |
Vertical System |
Bandwidth (-3dB) |
500MHz |
Vertical Resolution |
8 bit |
Vertical Range |
8 divisions |
Vertical scale (Probe 1X) |
1 MΩ: 500 μV/div - 10 V/div (setting range), 1 mV/div - 10 V/div (specified range)
50 Ω: 500 μV/div - 1 V/div (setting range), 1 mV/div - 1 V/div (specified range |
Offset Range (Probe 1X) |
0.5 mV/div - 20 mV/div: ±2V; 205 mV/div - 1 V/div: ±50 V;
20.5 mV/div - 100 mV/div: ±5V; 1.02 V/div - 2 V/div: ±200 V;
102 mV/div - 200 mV/div: ±20V; 2.05 V/div - 10 V/div: ±400 V |
Bandwidth Limit |
20 MHz (±40%), 200 MHz (±40%) |
Bandwidth Flatness (50 Ω, >2mV/div) |
10 kHz - BW/10: ±0.5 dB
BW/10 - BW/3: ±0.8 dB
BW/3 - BW2/3: +1.0 dB, -1.2 dB
BW2/3 - BW: +2.0 dB, -2.5 dB |
Low Frequency Response (AC Coupling -3dB) |
5 Hz (typical) |
SFDR |
≥32 dBc |
DC Gain Accuracy |
≤3.0% |
Offset Accuracy |
±(1.5%*offset+1.5%*full scale + 1 mV) |
Rise Time (typical) 50 Ω |
0.7 ns |
Overshoot (150 ps Fast Edge, 50 Ω) |
<10% (typical) |