• X Band RF power amplifier designed for pulsed signals fabricated on GaN on SiC process
• Pulsed operation offers high power density, low thermal resistance, narrowband performance
• Protections include thermal overload, over voltage, reverse polarity
• Frequency Range: 8GHz – 11GHz (BW)
• Output Power (Pk): 200 Watts (Psat)

The Elite RF X Band RF Amplifiers incorporate the most advanced, state of the art GaN transistors, reflecting Elite RF’s commitment to advanced engineering. Specializing in efficiently combining multiple power amplifier modules with precise phase and gain match and enables Elite RF to design high power X Band amplifiers with power levels in the kilowatts range.

The Elite RF X Band RF amplifier is a narrowband power amplifier designed for Pulsed signals fabricated on GaN on SiC process and can operate up to 11 GHz. These amplifiers offer high power density, low thermal resistance, and narrowband performance. They can be widely used for military and commercial applications.  

• Pulsed Operation
• Wide Frequency Range
• High Pk. Output Power
• High Gain
• High Reverse Isolation
• Built-in Protection for Thermal Overload and Over Voltage, Reverse Polarity
• Indicator Options - DC Power, Temp Fault